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力晶:公告本公司取得美國專利局核發US 8738836專利

鉅亨網/鉅亨網新聞中心 2014.09.26 00:00
第七條 第8款1.專利、商標、著作或其他智慧財產權之內容:NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ANDWRITE-IN METHOD THEREOF2.專利、商標、著作或其他智慧財產權之取得日期:103/07/273.取得專利、商標、著作或其他智慧財產權之成本:NT$794,2644.其他應敘明事項:A non-volatile semiconductor memory device, comprising: a non-volatilememory array, storing multi-values by setting a plurality of differentthreshold voltages for each memory cell, and a control circuit, controllinga write-in operation to the memory cell array. When data have been writteninto the memory cell, the control circuit selects an adjacent word line,uses an erasing level to perform write-in which is weaker than the datawrite-in, and verifies soft programming of the amount of one page, suchthat a narrow-banded erasing level distribution is realized in an adjacentmemory cell.

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