力晶：公告本公司取得日本專利局核發JP 5385435專利

第七條　第8款1.專利、商標、著作或其他智慧財產權之內容:NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND READOUT METHOD THEREOF2.專利、商標、著作或其他智慧財產權之取得日期:102/10/313.取得專利、商標、著作或其他智慧財產權之成本:NT＄198,1574.其他應敘明事項:A non-volatile semiconductor device includes: memory strings formed byseries connection of memory cells respectively connected to word lines,wherein each memory string is connected between a bit line and a source linevia first and second select gate transistors; and a control circuitcontrolling the first and second select gate transistors, such that whenvoltage of the word line is raised to a predetermined value for data readoutfrom the memory cell, a first status where the first select gate transistoris turned on and the second select gate transistor is turned off and secondstatus where the first select gate transistor is turned off and the secondselect gate transistor is turned on are generated alternately.