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力晶:公告本公司取得日本專利局核發JP 5292052專利

鉅亨網/鉅亨網新聞中心 2013.09.26 00:00
第七條 第8款1.專利、商標、著作或其他智慧財產權之內容:Non-volatilization semiconductor memory and the write-in method thereof2.專利、商標、著作或其他智慧財產權之取得日期:102/07/173.取得專利、商標、著作或其他智慧財產權之成本:NT$161,5614.其他應敘明事項:Task: to decrease the number of times of the verifying process andshorten the time to program. Means for Solving the Problems: In anon-volatile semiconductor memory device, comprising:a non-volatilememory array, which stores multi-valued states by settinga plurality of different threshold voltages to correspond to a pluralityof states to each memory cell; and a control circuit, which controlsprogramming to the memory cell array, when increasing the programmingvoltage from a predetermined programming start voltage by a predeterminedvoltage increment gradually and verifying it at the same time forprogramming the memory cell, the control circuit determines and sets theprogramming start voltage for programming according to a programming pulsenumber at the moment the verifying process passes in the precedingprogramming.

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