回到頂端
|||
熱門:

力晶:公告本公司取得日本專利局核發JP 5175561專利

鉅亨網/鉅亨網新聞中心 2013.03.29 00:00
第七條 第8款1.專利、商標、著作或其他智慧財產權之內容:Non-volatile semiconductor memory device2.專利、商標、著作或其他智慧財產權之取得日期:102/01/113.取得專利、商標、著作或其他智慧財產權之成本:NT$ 93,7014.其他應敘明事項: A memory cell array (10) has redundant region (R) that is formed between regular regions (A,B). A sense amplifier detects data signal on the bit-lines (BLA1-BLAi) of regular region (A) and outputs data signal to data line (MAA). Other sense amplifiers detect the data signals on the respective bit-lines (RBL1-RBLi, BLB1-BLBi) of redundant region (R) and regular region (B) and outputs detected data signals to respective data lines (MAR,MAB). Multiple selection units select respective data lines.

社群留言